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PD - 95248
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
l l
IRF7463PBF
HEXFET(R) Power MOSFET
VDSS
30V
RDS(on) max
8m
ID
14A
High Frequency Buck Converters for Computer Processor Power Lead-Free Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
Benefits
l l l
S S S G
1 2 3 4 8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 12 14 11 110 2.5 1.6 0.02 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
10/12/04
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.0 7.0 10.5 --- --- --- --- --- Max. Units --- V --- V/C 8.0 m 9.5 20 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A VGS = 2.7V, ID = 7.0A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V
IRF7463PBF
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 41 --- --- S VDS = 24V, ID = 11A --- 34 51 ID = 11A --- 7.6 11.4 nC VDS = 15V --- 12 18 VGS = 4.5V --- 21 32 VGS = 0V, VDS = 15V --- 16 --- VDD = 15V --- 138 --- ID = 11A ns --- 28 --- RG = 1.8 --- 6.5 --- VGS = 4.5V --- 3150 --- VGS = 0V --- 1070 --- VDS = 15V --- 180 --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
320 14
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- 2.3 A 110 1.3 --- 70 100 75 120 V ns nC ns nC
VSD trr Qrr trr Qrr
--- 0.52 --- 0.44 --- 45 --- 65 --- 50 --- 80
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 125C, IS = 11A, VGS = 0V TJ = 25C, IF = 11A, VR=15V di/dt = 100A/s TJ = 125C, IF = 11A, VR=15V di/dt = 100A/s
2
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IRF7463PBF
1000
VGS 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.0V TOP
1000
I D , Drain-to-Source Current (A)
100
10
1
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.0V TOP
10
2.0V
0.1
2.0V
1 0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.0
100.00
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 14A
ID, Drain-to-Source Current (A)
T J = 150C
1.5
10.00
1.0
1.00
T J = 25C VDS = 15V 20s PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5
0.5
0.10
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7463PBF
5000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
10
ID = 11A
VGS , Gate-to-Source Voltage (V)
4000
8
VDS = 24V VDS = 15V
C, Capacitance(pF)
3000
Ciss
6
2000
4
Coss
1000
2
Crss
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
100
TJ = 150 C
10
100
10us
100us
TJ = 25 C
1
10
1ms
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6
VSD ,Source-to-Drain Voltage (V)
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7463PBF
16
VDS VGS
RD
ID , Drain Current (A)
12
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
- VDD
8
4
Fig 10a. Switching Time Test Circuit
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJA + TA J 0.01 0.1 1 10 100
Thermal Response (Z thJA )
0.01 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7463PBF
RDS (on) , Drain-to-Source On Resistance ()
RDS(on) , Drain-to -Source On Resistance ()
0.0080
0.016
0.0075 VGS = 4.5V
0.012
0.0070
0.008
ID = 14A
0.0065 VGS = 10V 0 20 40 60 80 100
0.0060 ID , Drain Current (A)
0.004 2.0 4.0 6.0 8.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
EAS , Single Pulse Avalanche Energy (mJ)
Current Regulator Same Type as D.U.T.
800
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
TOP
600
BOTTOM
ID 6.3A 11A 14A
VG
VGS
3mA
Charge
IG ID
Current Sampling Resistors
400
15V
200
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
25
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7463PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
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7
IRF7463PBF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec R is measured at TJ approximately 90C
Starting TJ = 25C, L = 3.3mH
RG = 25, IAS = 14A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04
8
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